dm p10h400 se q document number ds 38396 rev . 2 - 2 1 of 7 www.diodes.com december 2015 ? diodes incorporated dm p10h400 se q 100v p - channel enhancement mode mosfet product summary b v dss r ds(on) max i d t a = + 25 ? c - 10 0v 2 50 m ? @ v gs = - 10v - 2.3a 300 m ? @ v gs = - 4.5v - 2.1a description and applications this mosfet is designed to meet the stringent requirements of automotive applications. it is qualified to aec - q101, s upported by a ppap and is ideal for use in : ? engine management systems ? body control electronics ? dc - dc converters features and benefits ? low g ate d rive ? low i nput c apacitance ? fast s witching s peed ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q10 1 standards for high reliability ? ppap capable (note 4 ) mechanical data ? case: so t223 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sens itivity: level 1 per j - std - 020 ? terminals connections: see d iagram b elow ? terminals: finish - matte tin a nnealed over copper l ead f rame . so lderable per mil - std - 202, method 208 ? weight: 0. 112 grams ( a pproximate) ordering information (note 5 ) part number case packaging dm p10h400seq - 13 sot223 2,5 00 / tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (< 1500ppm total br + cl) and <1000ppm antimony compounds. 4 . automotive products are aec - q101 qualified and are ppap capable. refer to http://www.diodes.com/product_compliance_definitions.html . 5 . for packaging details, go to our website at http://www.diodes.com /products/packages.html . marking information top view sot223 equivalent circuit p400se yww d s g = manufacturers marking p400se = marking code y ww = date code marking y or y = year (ex: 15 = 2 01 5 ) ww = week ( 01 to 53) pin out - top view e3
dm p10h400 se q document number ds 38396 rev . 2 - 2 2 of 7 www.diodes.com december 2015 ? diodes incorporated dm p10h400 se q maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss - 100 v gate - source voltage v gss 20 v continuous drain current , v gs = - 10 v (note 6 ) steady state t c = + 25c t a = +25 c i d - 6.0 - 2.3 a maximum body diode forward current (note 6 ) i s - 1.9 a pulsed drain current ( 38 0 ? dm - 1 0 a thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 6 ) t a = +25c p d 2.0 w t a = + 70 c 1.3 thermal resistance, junction to ambient (note 6 ) r ja 62 c/w total power dissipation (note 6 ) t c = +25c p d 13.7 w thermal resistance, junction to case (note 6 ) r j c 9.1 c/w operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss - 100 ? ? gs = 0v, i d = - 250 a zero gate voltage drain current i dss ? ? ds = - 8 0 v, v gs = 0v gate - source leakage i gss ? ? gs = 2 0 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs( th ) - 1.0 - 2.2 - 3.0 v v ds = v gs , i d = - 250 a static drain - source on - resistance r ds(on) ? ? gs = - 10 v, i d = - 5 a ? gs = - 4.5 v, i d = - 5 a diode forward voltage v sd ? gs = 0v, i s = - 5 a dynamic characteristics (note 8 ) input capacitance c iss ? ? ds = - 25 v, v gs = 0v , f = 1.0mhz output capacitance c oss ? ? rss ? ? g ? ? ? ? ? ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge ( v gs = - 4. 5 v ) q g ? ? ? ds = - 60 v, i d = - 5 a total gate charge ( v gs = - 10 v ) q g ? ? ? ? gs ? ? gd ? ? d( on ) ? ? dd = - 50v, r g = 9.1 ? d = - 5 a turn - on rise time t r ? ? d( off ) ? ? f ? ? ? ? rr ? ? gs = 0 v, i s = - 5 a , d i /d t = 100a/ rr ? ? ? ? gs = 0 v, i s = - 5 a , d i /d t = 100a/ notes: 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 7 . short duration pulse test used to minimize self - heating effect . 8 . guaranteed by design. not subject to production testing .
dm p10h400 se q document number ds 38396 rev . 2 - 2 3 of 7 www.diodes.com december 2015 ? diodes incorporated dm p10h400 se q 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0 4 8 12 16 20 r ds(on) , drain - source on - resistance ( ? ) v gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = - 5.0a 0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 10 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 5. typical on - resistance vs. drain current and junction temperature v gs = - 10 v - 55 25 85 125 150 0.0 2.0 4.0 6.0 8.0 10.0 0 1 2 3 4 5 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs = - 3.2v v gs = - 3.5v v gs = - 4.0v v gs = - 5.0v v gs = - 10v v gs = - 4.5v 0 2 4 6 8 1.5 2 2.5 3 3.5 4 4.5 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = - 5 v - 55 25 85 150 125 0.1 0.15 0.2 0.25 0.3 0.35 0 2 4 6 8 10 r ds(on) , drain - source on - resistance ( ? ) i d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs = - 4.5v v gs = - 10v 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 - 50 - 25 0 25 50 75 100 125 150 r ds(on), drain - source on - resistance (normalized) t j , junction temperature ( gs = - 4.5v, i d = - 5.0a v gs = - 10v, i d = - 5.0a
dm p10h400 se q document number ds 38396 rev . 2 - 2 4 of 7 www.diodes.com december 2015 ? diodes incorporated dm p10h400 se q 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( ? ) t j , junction temperature ( ) figure 7. on - resistance variation with junction temperature v gs = - 10v, i d = - 5.0a v gs = - 4.5v, i d = - 5.0a 1.4 1.6 1.8 2 2.2 2.4 2.6 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = - 250 a i d = - 1ma 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c iss c oss c rss 0 2 4 6 8 10 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current v gs =0v, t j = - 55 v gs =0v, t j =25 v gs =0v, t j =85 v gs =0v, t j =125 v gs =0v, t j =150 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 v gs (v) qg, total gate charge (nc) figure 11. gate charge v ds = - 60v, i d = - 5a 0.001 0.01 0.1 1 10 100 0.1 1 10 100 1000 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area t j(max) =150 c =25 gs = - 10v r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100 s
dm p10h400 se q document number ds 38396 rev . 2 - 2 5 of 7 www.diodes.com december 2015 ? diodes incorporated dm p10h400 se q 0.001 0.01 0.1 1 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance r ja (t)=r(t) * r ja r ja =98 /w duty cycle, d=t1 / t2 d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.7 d=0.9
dm p10h400 se q document number ds 38396 rev . 2 - 2 6 of 7 www.diodes.com december 2015 ? diodes incorporated dm p10h400 se q package outline dimensions please see ap02002 at http://www.di odes.com/datasheets/ap02002.pdf for the latest version. sot223 sot223 dim min max typ a 1.55 1.65 1.60 a1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 c 0.20 0.30 0.25 d 6.45 6.55 6.50 e 3.45 3.55 3.50 e1 6.90 7.10 7.00 e - - 4.60 e1 - - 2.30 l 0.85 1.05 0.95 q 0.84 0.94 0.89 all dimensions in mm suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. sot223 dimensions value (in mm) c 2.30 c1 6.40 x 1.20 x1 3.30 y 1.60 y1 1.60 y2 8.00 a1 a 7 7 d b e e1 b1 c e1 l 0 -10 q e 0.25 seating plane gauge plane x1 y1 y x c c1 y2
dm p10h400 se q document number ds 38396 rev . 2 - 2 7 of 7 www.diodes.com december 2015 ? diodes incorporated dm p10h400 se q important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or s ystems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in signific ant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. cu stomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requiremen ts concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
|
